of the material is often obtained by measuring point PL on the bulk material, but geometrical accuracy of the device requires mapping PL over the entire de- vice—or at least a region of interest on the device. Fig. 1 shows a typical PL emission near-IR spectrum of a III-V semiconductor measured at a point on a wafer, using the HORIBA MicOS PL wafer-mapper (Fig. 2). The versatile HORIBA MicOS PL wafer-mapper micro-PL system includes a vision camera so the user always sees the region of the wafer under excitation, useful when the wafer has patterned structures. The MicOS head is directly coupled to a triple-grating spectrometer, ensuring the highest throughput and wide spectral coverage (200–1600 nm). The MicOS can also use different excitation-laser wavelengths, and includes an

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