Inspection of solar cells Inspection of solar cells relies on imaging the photoluminescence or electroluminescence signals from a wafer for characterization. The peak emission for silicon occurs at about 1150 nm, and about 1330 nm for copper indium gallium diselenide (CIGS) and copper indium diselenide (CIS). This value is beyond the range of sensitivity for silicon- based detectors, such as CCDs; traditionally their quantum efficiency is only measured up to 1000 nm. The emission peak, however, is actually broad enough to allow deep-cooled CCDs to capture meaningful images using very long integration times (typically minutes). Although interesting, this is insufficient and unpractical for industrial applications. Alternatively, shortwave infrared (SWIR) InGaAs technology may be

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